Ultrafast Phenomena in Freestanding LT-GaAs Devices
نویسندگان
چکیده
منابع مشابه
Finite Element Simulation of Metal–Semiconductor–Metal Photodetector
LLE Review, Volume 119 154 Introduction Low-temperature–grown GaAs (LT-GaAs), deposited by molecular beam epitaxy, has been known for its ultrashort, subpicosecond photocarrier lifetime and relatively high carrier mobility. Therefore, in recent years LT-GaAs has been the material of choice for the fabrication of photonic devices such as photoconductive switches,1,2 both of the metal–semiconduct...
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ژورنال
عنوان ژورنال: Acta Physica Polonica A
سال: 2005
ISSN: 0587-4246,1898-794X
DOI: 10.12693/aphyspola.107.109